STP6NC90ZFP 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

STP6NC90ZFP

N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET

STMicroelectronics 

STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220 / D²PAK /

I²PAK

0.93

30

300

TO-220FP

3.13

AVALANCHE CHARACTERISTICS

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Max Value

5.4

356

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max.

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

900

Breakdown Voltage

∆BVDSS/∆TJ Breakdown Voltage Temp.

ID = 1 mA, VGS = 0

1

Coefficient

IDSS

Zero Gate Voltage

VDS = Max Rating

1

Drain Current (VGS = 0)

VDS = Max Rating, TC = 125 °C

50

IGSS

Gate-body Leakage

VGS = ±20V

±10

Current (VDS = 0)

°C/W

°C/W

°C

Unit

A

mJ

Unit

V

V/°C

µA

µA

µA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 3 A

Min.

3

Typ.

4

1.55

Max.

5

1.9

Unit

V

Ω

DYNAMIC

Symbol

gfs (1)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID = 3A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

5.7

2290

150

15

Max.

Unit

S

pF

pF

pF

2/13

Share Link: