GT30F126 데이터 시트보기 (PDF) - Toshiba

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GT30F126

30F126 - LCD Plasma common tube TO-220F

Toshiba 

Dual Radio-Frequency Bipolar Transistor

Part Number

MT6L63FS

MT6L64FS

MT6L65FS

MT6L67FS

MT6L68FS

MT6L71FS

MT6L72FS

MT6L75FS

MT6L76FS

MT6L77FS

MT6L78FS

Package

fS6

1.0

Absolute Maximum Ratings (Ta = 25°C)

VCEO (Q1/Q2) IC (Q1/Q2)

PC

(V)

(mA)

(mW)

5/6

25/40

110 (Note 1)

4.5/6

24/40

110 (Note 1)

4.5/6

36/40

110 (Note 1)

4.5/6

36/80

110 (Note 1)

5/6

15/40

110 (Note 1)

5/6

25/40

105 (Note 1)

4.5/6

36/40

105 (Note 1)

5/6

25/80

110 (Note 1)

5/6

15/80

110 (Note 1)

6/6

40/80

110 (Note 1)

6/6

40/40

105 (Note 1)

MT6L77FST

fS6T

1.0

6/6

40/80

140

Structure

(Q1/Q2)

MT3S07FS/MT3S11FS

MT3S35FS/MT3S11FS

MT3S36FS/MT3S11FS

MT3S36FS/MT3S106FS

MT3S06FS/MT3S11FS

MT3S07FS/MT3S11AFS

MT3S36FS/MT3S11AFS

MT3S07FS/MT3S106FS

MT3S06FS/MT3S106FS

MT3S11FS/MT3S106FS

MT3S11FS/MT3S11AFS

MT3S11FS/MT3S106FS

fT

(Q1/Q2)

(GHz)

12/6

19.5/6

20/6

20/8.5

10/6

12/6

19/6

12/8.5

10/8.5

6/8.5

6/6

♦Internal Connections

Q1

Q2

Marking

18

19

1F

1J

1K

1W

1X

52

53

54

55

6/8.5

54

PC: Total power dissipation

Note 1: When mounted on a glass-epoxy PCB board

• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

♦The internal connection diagrams only show the general configurations of the circuits.

SiGe HBTs

Part Number

MT4S100U

MT4S101U

MT4S102U

MT4S104U

MT4S200U

MT4S300U *

MT4S301U *

MT4S100T

MT4S101T

MT4S102T

MT4S104T

MT4S200T

MT4S300T *

MT4S301T *

MT3S106FS

Package

USQ

2.0

TESQ

1.2

fSM

0.6

Applications

VHF/UHF-band low-noise amps

VHF/UHF-band low-noise amps

UHF/SHF-band low-noise amps

UHF/SHF-band low-noise amps

UHF/SHF-band low-noise amps

UHF/SHF-band low-noise amps

UHF/SHF-band low-noise amps

VHF/UHF-band low-noise amps

VHF/UHF-band low-noise amps

UHF/SHF-band low-noise amps

UHF/SHF-band low-noise amps

UHF/SHF-band low-noise amps

UHF/SHF-band low-noise amps

UHF/SHF-band low-noise amps

Absolute Maximum Ratings (Ta = 25°C)

VCEO

IC

PC

Tj

(V) (mA)

(mW)

(°C)

3

15

45

150

3

10

30

150

3

20

60

150

3

10

30

150

4

35 140 (Note 1) 150

4

50

4

35

3

15

3

10

3

20

3

10

4

35

4

50

4

35

100

150

100

150

45

150

30

150

60

150

30

150

100

150

100

150

100

150

Marking

Remarks

P6 fT = 22 GHz

P7 fT = 21 GHz

P8 fT = 24 GHz

P1 fT = 23 GHz

P2 fT = 30 GHz

P3 fT = 26.5 GHz, high ESD immunity

P4 fT = 27.5 GHz, high ESD immunity

P6 fT = 23 GHz

P7 fT = 23 GHz

P8 fT = 25 GHz

P1 fT = 25 GHz

P2 fT = 30 GHz

P3 fT = 26.5 GHz, high ESD immunity

P4 fT = 27.5 GHz, high ESD immunity

VHF/UHF-band low-voltage operation, low-noise amps

6

80 100 (Note 1) 150

41 fT = 8.5 GHz

MT3S111 *

S-MINI

2.9

VHF/UHF-band low-noise, low-distortion amps

6

100 700 (Note 2) 150

R5 fT = 11.5 GHz

MT3S113 *

VHF/UHF-band low-noise, low-distortion amps

5.3

UFM

MT3S111TU *

2.0

6

VHF/UHF-band low-noise, low-distortion amps

MT3S113TU *

5.3

Pw-Mini

MT3S111P *

4.6

6

MT3S113P *

VHF/UHF-band low-noise, low-distortion amps

5.3

Note 1: When mounted on a glass-epoxy PCB board

Note 2: Mounted on a ceramic board

• The products shown in bold are also manufactured in offshore fabs.

• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.

100 800 (Note 2) 150

100 800 (Note 2) 150

100 900 (Note 2) 150

100 1000 (Note 2) 150

100 1600 (Note 2) 150

R7 fT = 12.5 GHz

R5 fT = 10 GHz

R7 fT = 11.2 GHz

R5 fT = 8 GHz

R7 fT = 7.7 GHz

*: New product

66

2010/9　SCE0004K

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