Radio-Frequency Small-Signal FETs
Radio-Frequency MOSFETs
Part Number
Package
Applications
Electrical Characteristics (Ta = 25°C)
Equivalent
VDS
ID
PD
IDSS
|Yfs|
Marking
Product
(V)
(mA)
(mW)
(mA)
(mS) Typ.
(Leaded Type)
3SK291
SMQ
2.9
UHF-band radio-frequency amps
12.5
30
150
0 to 0.1
26
UF
⎯
3SK292
3SK293
VHF/UHF-band radio-frequency amps
12.5
30
150
0 to 0.1
23.5
UV
⎯
USQ
2.0
UHF-band radio-frequency amps
12.5
30
100
0 to 0.1
26
UF
⎯
3SK294
VHF/UHF-band radio-frequency amps
12.5
30
100
0 to 0.1
23.5
UV
⎯
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Radio-Frequency Junction FETs
Part Number
Package
Applications
2SK210
S-MINI
2.9
FM-band radio-frequency amps
2SK711
AM-band radio-frequency amps
2SK1875
USM
2.0
AM-band radio-frequency amps
VGDO
VGDS ◊ (V)
−18
−20 ◊
−20 ◊
Electrical Characteristics (Ta = 25°C)
IG
PD
IDSS
(mA)
(mW)
(mA)
10
100
3.0 to 24
10
150
6 to 32
10
100
6 to 32
|Yfs|
(mS) Typ.
7
Marking
Y□
Equivalent
Product
(Leaded Type)
⎯
25
RB□
2SK709
25
RB□
2SK709
□: Denotes a IDSS class.
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
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2010/9 SCE0004K