GT30F126 데이터 시트보기 (PDF) - Toshiba
부품명
상세내역
제조사
GT30F126 Datasheet PDF : 73 Pages
| |||
IGBTs
IGBTs (Discrete IGBTs)
Part Number
Applications
Features
Absolute Maximum Ratings
(Ta = 25°C)
Ic
Pc
VCES
Ta = Tc =
(V)
DC Pulse
25°C 25°C
(A) (A)
(W) (W)
Package
Type
Circuit
Configuration
(Note)
GT10J321
Isolation,
10 20 ⎯ 29 TO-220NIS
(2)
Through-hole
GT15J321
GT15J331
Isolation,
15 30 ⎯ 30 TO-220NIS
(2)
Through-hole
15 30 ⎯ 70 TO-220SM
SMD
(2)
GT20J321
GT30J121
Power supplies High-speed
Isolation,
20 40 ⎯ 45 TO-220NIS
(2)
600
Through-hole
(and UPS/PFC/Motor) switching
30 60 ⎯ 170 TO-3P(N) Through-hole
(1)
GT30J126
GT30J324
GT50J121
GT50J325
Isolation,
30 60 ⎯ 90 TO-3P(N)IS
(1)
Through-hole
30 60 ⎯ 170 TO-3P(N) Through-hole
(2)
50 100 ⎯ 240 TO-3P(LH) Through-hole
(1)
50 100 ⎯ 240 TO-3P(LH) Through-hole
(2)
GT10Q101
GT10Q301
GT15Q102
GT15Q301
GT25Q102
GT25Q301
10 20 ⎯ 140 TO-3P(N) Through-hole
(1)
10 20 ⎯ 140 TO-3P(N) Through-hole
(2)
High
15 30 ⎯ 170 TO-3P(N) Through-hole
(1)
1200
ruggedness
15 30 ⎯ 170 TO-3P(N) Through-hole
(2)
25 50 ⎯ 200 TO-3P(LH) Through-hole
(1)
25 50 ⎯ 200 TO-3P(LH) Through-hole
(2)
GT5J301
GT5J311
5
10
⎯ 28
Isolation,
TO-220NIS Through-hole
(2)
5 10 ⎯ 45 TO-220SM
SMD
(2)
GT10J301
10 20 ⎯ 90
TO-3P(N) Through-hole
(2)
GT10J303
GT10J312
Motor drives
(and UPS/PFC)
10
20
⎯ 30
Isolation,
TO-220NIS Through-hole
(2)
10 20 ⎯ 60 TO-220SM
SMD
(2)
GT15J301
GT15J311
High
ruggedness
15
30
⎯ 35
Isolation,
TO-220NIS Through-hole
(2)
15 30 ⎯ 70 TO-220SM
SMD
(2)
GT20J101
20 40 ⎯ 130 TO-3P(N) Through-hole
(1)
GT20J301
20 40 ⎯ 130 TO-3P(N) Through-hole
(2)
GT30J101
30 60 ⎯ 155 TO-3P(N) Through-hole
(1)
GT30J301
30 60 ⎯ 155 TO-3P(N) Through-hole
(2)
GT50J102
50 100 ⎯ 200 TO-3P(LH) Through-hole
(1)
GT50J301
GT30J122
50 100 ⎯ 200 TO-3P(LH) Through-hole
(2)
600
Low VCE(sat)
Power factor
correction
frequency
30
100 ⎯
75
TO-3P(N)IS
Isolation,
Through-hole
(1)
switching
GT30J322
GT35J321
30
100 ⎯
75
TO-3P(N)IS
Isolation,
Through-hole
(2)
37
100 ⎯
75
Isolation,
TO-3P(N)IS Through-hole
(2)
GT40J321
GT40J322
GT50J322
GT50J322H
GT50J327
GT50J328
IH rice cookers,
IH cooktops,
Microwave ovens,
Induction heating
equipment
AC 200 V
Current
resonance
40 100 ⎯ 120 TO-3P(N) Through-hole
(2)
40 100 ⎯ 120 TO-3P(N) Through-hole
(2)
50 100 ⎯ 130 TO-3P(LH) Through-hole
(2)
50 100 ⎯ 130 TO-3P(LH) Through-hole
(2)
50 100 ⎯ 140 TO-3P(N) Through-hole
(2)
50 120 ⎯ 140 TO-3P(N) Through-hole
(2)
GT60J321
60 120 ⎯ 200 TO-3P(LH) Through-hole
(2)
GT60J323
60 120 ⎯ 170 TO-3P(LH) Through-hole
(2)
GT60J323H
60 120 ⎯ 170 TO-3P(LH) Through-hole
(2)
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
VCE(sat) Typ.
@Ta = 25°C
@IC @VGE
(V) (A)
(V)
2.0 10
15
1.9 15
15
1.75 15
15
2.0 20
15
2.0 30
15
1.95 30
15
2.0 30
15
2.0 50
15
2.0 50
15
2.1 10
15
2.1 10
15
2.1 15
15
2.1 15
15
2.1 25
15
2.1 25
15
2.1 5
15
2.1 5
15
2.1 10
15
2.1 10
15
2.1 10
15
2.1 15
15
2.1 15
15
2.1 20
15
2.1 20
15
2.1 30
15
2.1 30
15
2.1 50
15
2.1 50
15
2.1 50
15
2.1 50
15
1.9 50
15
2.0 40
15
1.7 40
15
2.1 50
15
2.2 50
15
1.9 50
15
2.0 50
15
1.55 60
15
1.9 60
15
2.1 60
15
tf Typ.
@Ta = 25°C
Test
(µs) Conditions
Remarks
0.03
0.03
0.10
Low VCE (sat)
0.04
0.05
0.05
0.05
0.05
0.05
0.16
0.16
0.16
0.16
0.16 Inductive load
0.16
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.15
Partial switching
0.25
converter
0.25
0.19
0.11
Fast switching
0.20 Resistive load
0.25
0.11
Fast switching
0.19
0.1
Fast switching
0.30
Low VCE (sat)
0.16
0.12
Fast switching
Note)
(1) Typical
(2) Built-in FRD
(3) Built-in Zener diode
Collector
Collector
Collector
Gate
Gate
Gate
Emitter
Emitter
Emitter
69
2010/9 SCE0004K
Share Link: 