GT30F126 데이터 시트보기 (PDF) - Toshiba
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GT30F126 Datasheet PDF : 73 Pages
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IGBT (Discrete IGBT) (Continued)
Part Number
Applications
Features
Absolute Maximum Ratings (Ta = 25°C)
Ic
Pc
VCES
(V) DC Pulse Ta = 25°C Tc = 25°C
(A) (A)
(W)
(W)
Package
Type
Circuit
Configuration
(Note)
VCE(sat) Typ.
@Ta = 25°C
@IC @VGE
(V) (A) (V)
tf Typ.
@Ta = 25°C
Test
(µs) Conditions
Remarks
GT15M321
15
30
⎯
GT50M322
GT60M323
GT60M303
IH rice cookers,
IH cooktops,
50 120
⎯
900
60 120
⎯
60 120
⎯
GT60M324 * Microwave ovens,
60 120
⎯
GT50N321
Induction heating
50 120
⎯
GT50N322A
equipment AC100 V Voltage
50 120
⎯
GT50N324
resonance 1000 50
120
⎯
GT60N321
60 120
⎯
GT60N322
57 120
⎯
GT40Q321
IH rice cookers,
1200 42
80
⎯
GT40T321
GT40T302
*
IH cooktops,
Microwave ovens,
* Induction heating
equipment AC200 V
40
80
⎯
1500
40
80
⎯
GT5G133 * Digital still cameras,
cell phone
⎯ 130 0.83
GT8G132
⎯ 150
1.1
Isolation,
55 TO-3P(N)IS
(2)
Through-hole
1.8 15
156 TO-3P(N) Through-hole (2)
2.1 60
200 TO-3P(LH) Through-hole (2)
2.3 60
170 TO-3P(LH) Through-hole (2)
2.1 60
254 TO-3P(N) Through-hole (2)
1.7 60
156 TO-3P(N) Through-hole (2)
2.5 60
156 TO-3P(N) Through-hole (2)
2.2 60
150 TO-3P(N) Through-hole (2)
1.9 60
170 TO-3P(LH) Through-hole (2)
2.3 60
200 TO-3P(LH) Through-hole (2)
2.4 60
170 TO-3P(N) Through-hole (2)
2.8 40
230 TO-3P(N) Through-hole (2) 2.15 40
200 TO-3P(LH) Through-hole (2)
3.7 40
⎯
TSON-8
SMD
(3)
3.0 130
⎯
SOP-8
SMD
(3)
2.3 150
GT8G133
GT8G134
GT8G136
Strobe flash
⎯ 150
1.1
Digital still cameras, (dimming 400
single lens reflex
control)
⎯ 150
1.1
cameras
⎯ 150
1.1
⎯ TSSOP-8 SMD
⎯ TSSOP-8 SMD
⎯ TSSOP-8 SMD
(3)
2.9 150
(3)
3.4 150
(3)
3.5 150
GT10G131
⎯ 200
1.9
⎯
SOP-8
SMD
(3)
2.3 200
GT30F122
⎯ 120
⎯
Isolation,
25 TO-220SIS
Through-hole
GT30F123
300 ⎯ 200
⎯
Isolation,
25 TO-220SIS
Through-hole
GT30F124 *
⎯ 200
⎯
Isolation,
25 TO-220SIS
Through-hole
GT30F125 *
GT45F122
GT45F123
PDP-TV
PDP sustain, 330 ⎯ 200
⎯
energy
recovery and
⎯ 200
⎯
separation
circuits
⎯ 200
⎯
Isolation,
25 TO-220SIS
Through-hole
Isolation,
25 TO-220SIS
Through-hole
Isolation,
26 TO-220SIS
Through-hole
GT45F124
300
⎯ 200
⎯
Isolation,
29 TO-220SIS
Through-hole
GT45F125
⎯ 200
⎯
Isolation,
29 TO-220SIS
Through-hole
GT45F127
⎯ 200
⎯
Isolation,
26 TO-220SIS
Through-hole
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
Note)
(1) Typical
(2) Built-in FRD
(3)
(1)
2.4 120
(1)
2.1 120
(1)
2.3 120
(1)
1.9 120
(1)
2.2 120
(1) 1.95 120
(1)
1.7 120
(1) 1.45 120
(1)
1.6 120
Built-in Zener diode
15 0.20
15 0.25
15 0.09
15 0.25
15 0.11
15 0.25
15 0.1
15 0.11
15 0.25
15 0.11
15 0.41
15 0.24
For small power
Fast switching
Tj = 175°C
Fast switching
6th generation
Fast switching
Tj = 175°C
15 0.23
High VCES
ICP = 130 A
2.5 1.5
@VGE = 2.5V
gate drive
ICP = 150 A
4.0 1.6
@VGE = 4.0V
gate drive
ICP = 150 A
4.0 1.7
@VGE = 4.0V
gate drive
Resistive ICP = 150 A
2.5 1.2 load @VGE = 2.5V
gate drive
ICP = 150 A
3.0 1.6
@VGE = 3.0V
gate drive
ICP = 200 A
4.0 1.8
@VGE = 4.0V
gate drive
15 0.21
5th generation
15 0.15
6th generation
15 0.15
6th generation
15 0.15
6th generation
15 0.2
5th generation
15 0.2
5th generation
15 0.22
5th generation
15 0.4
5th generation
15 0.27
6th generation
*: New product
Collector
Collector
Collector r
Gate
Gate
Gate
Emitte
Emitte
Emitte
70
2010/9 SCE0004K
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