BYV410-600 데이터 시트보기 (PDF) - NXP Semiconductors.

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BYV410-600

Enhanced ultrafast dual rectifier diode

NXP Semiconductors. 

NXP Semiconductors

BYV410-600

Enhanced ultrafast dual rectifier diode

5. Thermal characteristics

Table 5.

Symbol

Rth(j-mb)

Thermal characteristics

Parameter

thermal resistance from

junction to mounting base

Rth(j-a)

thermal resistance from

junction to ambient

Conditions

with heatsink compound; per diode;

see Figure 3

with heatsink compound; both diodes

conducting

Min Typ Max Unit

-

-

2.4 K/W

-

-

1.6 K/W

-

60

-

K/W

10

Zth(j-mb)

(K/W)

1

001aag912

10−1

10−2

P

tp

δ=

T

10−3

10−6

10−5

10−4

10−3

10−2

10−1

tp

t

T

1

10

tp (s)

Fig 3. Transient thermal impedance from junction to mounting base per diode as a function of pulse width

BYV410-600_1

Product data sheet

Rev. 01 — 29 June 2009

© NXP B.V. 2009. All rights reserved.

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