MT48H16M16LFF-8 데이터 시트보기 (PDF) - Micron Technology

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MT48H16M16LFF-8

256Mb: x16 MOBILE SDRAM

Micron Technology 

WRITEs

WRITE bursts are initiated with a WRITE command,

as shown in Figure 13.

The starting column and bank addresses are pro-

vided with the WRITE command, and auto precharge

is either enabled or disabled for that access. If auto

precharge is enabled, the row being accessed is

precharged at the completion of the burst. For the ge-

neric WRITE commands used in the following illustra-

tions, auto precharge is disabled.

During WRITE bursts, the first valid data-in ele-

ment will be registered coincident with the WRITE com-

mand. Subsequent data elements will be registered on

each successive positive clock edge. Upon completion

of a fixed-length burst, assuming no other commands

have been initiated, the DQs will remain High-Z and

any additional input data will be ignored (see Figure

14). A full-page burst will continue until terminated.

(At the end of the page, it will wrap to the start address

and continue.)

Data for any WRITE burst may be truncated with a

subsequent WRITE command, and data for a fixed-

length WRITE burst may be immediately followed by

data for a WRITE command. The new WRITE command

can be issued on any clock following the previous WRITE

command, and the data provided coincident with the

new command applies to the new command. An ex-

Figure 13

WRITE Command

CLK

CKE HIGH

CS#

RAS#

CAS#

WE#

A0-A8: x16

A9, A11: x16

A10

COLUMN

ADDRESS

ENABLE AUTO PRECHARGE

DISABLE AUTO PRECHARGE

BA0,1

BANK

ADDRESS

ADVANCE

256Mb: x16

MOBILE SDRAM

ample is shown in Figure 15. Data n + 1 is either the last

of a burst of two or the last desired of a longer burst. The

256Mb SDRAM uses a pipelined architecture and there-

fore does not require the 2n rule associated with a

prefetch architecture. A WRITE command can be initi-

ated on any clock cycle following a previous WRITE

command. Full-speed random write accesses within a

page can be performed to the same bank, as shown in

Figure 16, or each subsequent WRITE may be per-

formed to a different bank.

Figure 14

WRITE Burst

T0

T1

T2

T3

CLK

COMMAND

WRITE

NOP

NOP

NOP

ADDRESS

DQ

BANK,

COL n

DIN

n

DIN

n+1

Figure 15

WRITE to WRITE

T0

T1

T2

CLK

COMMAND

WRITE

NOP

WRITE

ADDRESS

BANK,

COL n

BANK,

COL b

DQ

DIN

n

DIN

n+1

DIN

b

DON’T CARE

NOTE: DQM is LOW. Each WRITE command may

be to any bank.

256Mb: x16 Mobile SDRAM

MobileRamY26L_A.p65 – Pub. 5/02

21

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2002, Micron Technology, Inc.

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