AT89C51RC2(2002) 데이터 시트보기 (PDF) - Atmel Corporation

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AT89C51RC2
(Rev.:2002)

FLASH C51 Microcontrollers

Atmel Corporation 

AT89C51RB2 / RC2 & T89C51IC2 QualPack

4.3.3 Time Dependent Dielectric Breakdown

Purpose:

To evaluate the AT56800 thin gate oxide TDDB performance as follows:

a) To determine the activation energy of gate oxide failures on STI active edge capacitors

b) To determine the field acceleration factor for intrinsic gate oxide failures

c) To determine the sigma the lognormal standard deviation of the time to breakdown distribution of the

intrinsic gate oxide

Test Parameters:

Lot

Min thickness:

Max thickness:

Capacitor size:

9G3470 (wafers 4, 5, 18)

72.9A

74.7A

6.267um2

The stress conditions used are shown below:

Temperature/Field

9.5MV/cm

225C

N=5

200C

N=5

175C

N=5

10.0MV/cm

N=5

N=5

N=5

10.5MV/cm

N=5

N=5

N=6

Accumulated total stress time: 132 hours / 46 capacitors

Calculation Parameters:

Failure Criteria:

Temp/Voltage use:

Oxide thickness:

0.01% failures

105°c / 3.3v

63A (target –10%)

Lifetime Prediction:

The equation used to describe the breakdown of gate oxides is:

Tbd(i) = exp(SIGMA*Z(i) + GAMMA*Eox +Ea/kT + T0)

Where

Tbd(i) is the time to breakdown of the ith capacitor,

SIGMA is the lognormal standard deviation of the breakdown distribution,

Z(i) is the Z-score of the ith capacitor (essentially the difference between its breakdown time and the mean

measured in standard deviations),

GAMMA is the Field acceleration constant,

Eox is the oxide field,

Ea is the activation energy of this failure mechanism,

K is Boltzmann’s constant,

T is the Kelvin Temperature, and

T0 is a fitting constant.

Rev. 1 – 2002 June

12

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