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AT89C51RC2(2002) 데이터 시트보기 (PDF) - Atmel Corporation

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AT89C51RC2
(Rev.:2002)
Atmel
Atmel Corporation Atmel
AT89C51RC2 Datasheet PDF : 23 Pages
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AT89C51RB2 / RC2 & T89C51IC2 QualPack
Conclusions:
- Vt_wrt shift of 200mV after 10k cycles
- I_read decrease of 2.5uA after 10kcycles (- 7 to 9 %)
- No big difference between bit0 and bit 7 in terms of Vt or current variations Using the coefficients
4.3.4.2 Cell retention
Purpose:
To extrapolate cell life duration at 125°c from bake measurements at high temperature.
Test parameters:
Lot:
9T0930
Temperature: 250°c and 200°c
Duration:
92 hours
Lifetime Prediction:
The equation used to describe memory cell retention is:
DVt (V) = A * (t[h])^m * exp (-1.05eV/kT[K])
Results :
56.8k cell - 9t0930 (#24/25)
0
-1 1
-2
-3
-4
-5
10
100
y = 0,2138Ln(x) - 2,3118
y = 0,2211Ln(x) - 4,8026
200C
250C
Bake time (h)
Test measurements
290,0
270,0
250,0
230,0
210,0
190,0
170,0
150,0
1
10
100 1000 10000 100000
time (h)
Extrapolated Life Time
Conclusions :
Extrapolation to 125C - 10years = Vt loss is less than 0.8mV
Rev. 1 – 2002 June
15

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