AT89C51RC2(2002) 데이터 시트보기 (PDF) - Atmel Corporation
부품명
상세내역
제조사
AT89C51RC2 Datasheet PDF : 23 Pages
| |||
AT89C51RB2 / RC2 & T89C51IC2 QualPack
4.3.4.3 Cell Read Disturb
Purpose:
To measure read disturb influence on 56k8 memory cell.
Test parameters:
Lot:
0t0348
Programming: 14V on WL and sensegate @5ms
Temperature: 25°c and 140°c
The cell is stressed with BL voltage much higher than standard read conditions (around 6V) to accelerate disturb
phenomenon : electrons from the Floating gate can move through the tunnel oxide. This charge loss is measured
after stress by a Vt measurement.
Test results:
2.5
2
1.5
1
0.5
0
0 .1
0t0348 #01 56.8k (568A6)
BL rea d disturb @25C
V bl=6V
Vbl=6. 5V
V bl=7V
Vbl=7. 5V
V bl=8V
1
10
100
1000
10000
Time (s)
2.5
2
1.5
1
0.5
0
0 .1
0t0348 #01 56.8k (568A6)
BL read disturb @140C
V bl=6V
V bl=6. 5V
V bl=7V
V bl=7. 5V
V bl=8V
1
10
100
1000
10000
Time (s)
Conclusion:
Extrapolation to 10 years lifetime give a maximum BL voltage of around 4V in read operation, which is much higher
than nominal BL read voltage (~1V). So there is no sensitivity to read disturb either at room temperature or high
temperature.
Rev. 1 – 2002 June
16
Share Link: 