FDS5672 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDS5672

N-Channel PowerTrench® MOSFET 60V, 12A, 10mΩ

Fairchild Semiconductor 

Resistive Switching Characteristics (VGS = 10V)

tON

Turn-On Time

td(ON)

Turn-On Delay Time

tr

td(OFF)

Rise Time

Turn-Off Delay Time

VDD = 30V, ID = 12A

VGS = 10V, RGS = 9.1Ω

tf

Fall Time

tOFF

Turn-Off Time

-

-

50

ns

-

13

-

ns

-

20

-

ns

-

35

-

ns

-

14

-

ns

-

-

64

ns

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Voltage

trr

Reverse Recovery Time

QRR

Reverse Recovered Charge

ISD = 12A

-

ISD = 6A

-

ISD=12A, dISD/dt = 100A/µs

-

ISD=12A, dISD/dt = 100A/µs

-

-

1.25

V

-

1.0

V

-

39

ns

-

40

nC

Notes:

1: Starting TJ = 25°C, L = 1mH, IAS = 22A, VDD = 60V, VGS = 10V.

2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

3:

drain

RθJA

ipsinmse. aRsuθJreCdiswgituha1ra.0ntiene2dcobpypdeersoignnFwRh-4ilebRoaθJrdA.

is

determined

by

the

user’s

board

design.

©2005 Fairchild Semiconductor Corporation

3

FDS5672 Rev. A

www.fairchildsemi.com

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