FDS5672 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS5672 Datasheet PDF : 12 Pages
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Typical Characteristics TC = 25°C unless otherwise noted
400
100µs
100
1ms
10
OPERATION IN THIS
AREA MAY BE
1
LIMITED BY rDS(ON)
10ms
SINGLE PULSE
TJ = MAX RATED
TA = 25oC
0.1
0.1
1
10
70
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 25oC
STARTING TJ = 150oC
1
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
25
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
VDD = 15V
15
TJ = 150oC
10
TJ = 25oC
5
TJ = -55oC
0
3.0
3.5
4.0
4.5
5.0
5.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
25
VGS = 6V
VGS = 5V
20
15
VGS = 10V
VGS = 4.5V
10
5
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
0.2
0.4
0.6
0.8
1.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
15.0
12.5
VGS = 6V
10.0
VGS = 10V
7.5
5.0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3
6
9
12
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
-80
VGS = 10V, ID = 12A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2005 Fairchild Semiconductor Corporation
5
FDS5672 Rev. A
www.fairchildsemi.com
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