MT46H16M32LF 데이터 시트보기 (PDF) - Micron Technology

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MT46H16M32LF

Mobile Low-Power DDR SDRAM

Micron Technology 

512Mb: x16, x32 Mobile LPDDR SDRAM

Electrical Specifications

Table 6: Capacitance (x16, x32)

Note 1 applies to all the parameters in this table

Parameter

Symbol

Min

Max

Unit

Notes

Input capacitance: CK, CK#

Delta input capacitance: CK, CK#

Input capacitance: command and address

Delta input capacitance: command and address

Input/output capacitance: DQ, DQS, DM

Delta input/output capacitance: DQ, DQS, DM

CCK

1.5

3.0

pF

CDCK

–

0.25

pF

2

CI

1.5

3.0

pF

CDI

–

0.5

pF

2

CIO

2.0

4.5

pF

CDIO

–

0.5

pF

3

Notes:

1. This parameter is sampled. VDD/VDDQ = 1.70–1.95V, f = 100 MHz, TA = 25˚C, VOUT(DC) =

VDDQ/2, VOUT (peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflecting the

fact that they are matched in loading.

2. The input capacitance per pin group will not differ by more than this maximum amount

for any given device.

3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maxi-

mum amount for any given device.

PDF: 09005aef83dd2b3e

t67m_512mb_mobile_lpddr.pdf - Rev. H 06/13 EN

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Micron Technology, Inc. reserves the right to change products or specifications without notice.

© 2009 Micron Technology, Inc. All rights reserved.

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