LH28F800SU 데이터 시트보기 (PDF) - Sharp Electronics
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LH28F800SU Datasheet PDF : 38 Pages
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LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
DC Characteristics (Continued)
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
3/5 » = Pin Set High for 3.3 V Operations
SYMBOL
PARAMETER
IPPR VPP Read Current
IPPW VPP Write Current
TYPE
40
IPPE VPP Erase Current
20
IPPES
VIL
VIH
VPP Erase Suspend
Current
Input Low Voltage
Input High Voltage
VOL Output Low Voltage
VOH1
VOH2
Output High Voltage
VPPL
VPP during Normal
Operations
VPPH
VPP during Write/Erase
Operations
5.0
VLKO
VCC Erase/Write
Lock Voltage
MIN.
MAX. UNITS
TEST CONDITIONS
200
µA VPP > VCC
60
mA
VPP = VPPH, Word/Byte
Write in Progress
40
mA
VPP = VPPH,
Block Erase in Progress
200
µA
VPP = VPPH,
Block Erase Suspended
-0.3
0.8
V
2.0
VCC + 0.3 V
0.4
V
VCC = VCC MIN. and
IOL = 4 mA
2.4
V
IOH = -2.0 mA
VCC = VCC MIN.
VCC - 0.2
V
IOH = -100 µA
VCC = VCC MIN.
0.0
5.5
V
4.5
5.5
V
2.0
V
NOTE
1
1
1
1
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3 V, VPP = 5.0 V, T = 25°C. These currents are valid for all
product versions (package and speeds).
2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Automatic Power Saving (APS) reduces ICCR to less than 1 mA in Static operation.
4. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.
20
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