LH28F800SU 데이터 시트보기 (PDF) - Sharp Electronics
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LH28F800SU Datasheet PDF : 38 Pages
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LH28F800SU
8M (512K × 16, 1M × 8) Flash Memory
AC Characteristics for CE » - Controlled Command Write Operations1
TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tPHWL
tVPEH
tWLEL
tAVEH
tDVEH
tELEH
tEHDX
tEHAX
tEHWH
tEHEL
tGHEL
tEHRL
tRHPL
tPHEL
tEHGL
tQVVL
tEHQV1
tEHQV2
Write Cycle Time
RP » Setup to WE Going Low
VPP Setup to CE » Going High
WE Setup to CE » Going Low
Address Setup to CE» Going High
Data Setup to CE» Going High
CE » Pulse Width
Data Hold from CE» High
Address Hold from CE » High
WE Hold from CE » High
CE » Pulse Width High
Read Recovery before Write
CE » High to RY »/BY » Going Low
RP » Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
RP » High Recovery to CE » Going Low
Write Recovery before Read
VPP Hold from Valid Status Register
(CSR, GSR, BSR) Data and RY »/BY » High
Duration of Word/Byte Write Operation
Duration of Block Erase Operation
VCC = 3.3 V ±0.3 V
TYP. MIN. MAX.
120
480
100
0
75
75
75
10
10
10
45
0
100
0
1
95
0
12
5
0.3
UNITS NOTE
ns
ns
3
ns
3
ns
ns
2, 6
ns
2, 6
ns
ns
2
ns
2
ns
ns
ns
ns
ns
3
µs
ns
µs
µs
4, 5
s
4
32
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