LH28F800SU 데이터 시트보기 (PDF) - Sharp Electronics
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LH28F800SU Datasheet PDF : 38 Pages
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8M (512K × 16, 1M × 8) Flash Memory
LH28F800SU
AC Characteristics for Page Buffer Write Operations1
TA = 0°C to +70°C
SYMBOL
PARAMETER
tAVAV
tELWL
tAVWL
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHGL
Write Cycle Time
CE » Setup to WE Going Low
Address Setup to WE Going Low
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
CE » Hold from WE High
WE Pulse Width High
Read Recovery before Write
Write Recovery before Read
VCC = 3.3 V ± 0.3 V
TYP. MIN. MAX.
120
10
0
75
75
10
10
10
45
0
95
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
3
2
2
2
SYMBOL
PARAMETER
VCC = 5.0 V ± 0.25 V
TYP. MIN. MAX.
VCC = 5.0 V ± 0.5 V
UNITS NOTE
TYP. MIN. MAX.
tAVAV Write Cycle Time
70
80
tELWL CE» Setup to WE Going Low
0
0
tAVWL Address Setup to WE Going Low
0
0
tDVWH Data Setup to WE Going High
50
50
tWLWH WE Pulse Width
40
50
tWHDX Data Hold from WE High
0
0
tWHAX Address Hold from WE High
10
10
tWHEH CE» Hold from WE High
10
10
tWHWL WE Pulse Width High
30
30
tGHWL Read Recovery before Write
0
0
tWHGL Write Recovery before Read
60
65
NOTES:
CE » is defined as the latter of CE »0 or CE »1 going Low or the first of CE »0 or CE »1 going High.
1. These are WE » controlled write timings, equivalent CE » controlled write timings apply.
2. Sampled, but not 100% tested.
3. Address must be valid during the entire WE » Low pulse.
ns
ns
ns
3
ns
2
ns
ns
2
ns
2
ns
ns
ns
ns
35
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