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NGTB50N120FL2WG 데이터 시트보기 (PDF) - ON Semiconductor

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NGTB50N120FL2WG
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NGTB50N120FL2WG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
NGTB50N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
Features
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High Speed Switching
10 ms Short Circuit Capability
These are Pb−Free Devices
Typical Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
1200
V
IC
A
100
50
Pulsed collector current, Tpulse
limited by TJmax
Diode forward current
@ TC = 25°C
@ TC = 100°C
ICM
200
A
IF
A
100
50
Diode pulsed current, Tpulse limited
IFM
by TJmax
Gate−emitter voltage
VGE
Transient gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
200
A
$20
V
±30
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
W
535
267
Short Circuit Withstand Time
TSC
VGE = 15 V, VCE = 500 V, TJ 150°C
Operating junction temperature
TJ
range
10
ms
−55 to +175 °C
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
Tstg
TSLD
−55 to +175 °C
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
50 A, 1200 V
VCEsat = 2.20 V
Eoff = 1.40 mJ
C
G
E
G
C
E
TO−247
CASE 340AL
MARKING DIAGRAM
50N120FL2
AYWWG
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
Package Shipping
NGTB50N120FL2WG TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
1
May, 2015 − Rev. 5
Publication Order Number:
NGTB50N120FL2W/D

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