NGTB50N120FL2WG 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
NGTB50N120FL2WG Datasheet PDF : 8 Pages
| |||
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
70
60
TJ = 25°C
50
40
TJ = 150°C
30
20
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VF, FORWARD VOLTAGE (V)
Figure 7. Diode Forward Characteristics
16
14
12
VCE = 600 V
10
8
6
4
VCE = 600 V
2
VGE = 15 V
IC = 50 A
0
0
50 100 150 200 250 300 350
QG, GATE CHARGE (nC)
Figure 8. Typical Gate Charge
6
5
Eon
4
3
Eoff
2
VCE = 600 V
1
VGE = 15 V
IC = 50 A
Rg = 10 W
0
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Switching Loss vs. Temperature
1000
td(off)
tf
100
td(on)
tr
VCE = 600 V
VGE = 15 V
IC = 50 A
Rg = 10 W
10
0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Switching Time vs. Temperature
12
VCE = 600 V
10
VGE = 15 V
TJ = 150°C
Rg = 10 W
8
Eon
6
4
Eoff
2
0
5
15 25 35 45 55 65 75 85
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
1000
td(on)
100
td(off)
tf
tr
VCE = 600 V
VGE = 15 V
IC = 50 A
Rg = 10 W
10
5
15 25 35 45 55 65 75 85
IC, COLLECTOR CURRENT (A)
Figure 12. Switching Time vs. IC
www.onsemi.com
4
Share Link: 