NGTB50N120FL2WG 데이터 시트보기 (PDF) - ON Semiconductor
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NGTB50N120FL2WG Datasheet PDF : 8 Pages
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NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
18
16
VCE = 600 V
VGE = 15 V
14 TJ = 150°C
IC = 50 A
12
Eon
10
8
6
Eoff
4
2
0
5
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
10000
1000
VCE = 600 V
VGE = 15 V
TJ = 150°C
IC = 50 A
tf
100
tr
td(off)
td(on)
10
5
15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 14. Switching Time vs. Rg
9
8
7
6
Eon
5
4
3
Eoff
2
VGE = 15 V
TJ = 150°C
1
IC = 50 A
0
Rg = 10 W
350 400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
1000
td(off)
tf
100
td(on)
10
350
tr
VGE = 15 V
TJ = 150°C
IC = 50 A
Rg = 10 W
400 450 500 550 600 650 700 750 800
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 16. Switching Time vs. VCE
1000
1000
100
dc operation
10
Single Nonrepetitive
1 Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
1
10
100
50 ms
100 ms
1 ms
1000
10000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Safe Operating Area
100
10
VGE = 15 V, TC = 125°C
1
1
10
100
1000
10000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
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