NGTB50N120FL2WG 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
NGTB50N120FL2WG Datasheet PDF : 8 Pages
| |||
1
50% Duty Cycle
0.1 20%
10%
5%
0.01 2%
0.001
0.0001
1E−06
Single Pulse
1E−05
NGTB50N120FL2WG
TYPICAL CHARACTERISTICS
RqJC = 0.28
Junction R1
C1
R2
Rn Case Ri (°C/W) Ci (J/°C)
0.048747 0.006487
0.043252 0.023120
0.051703 0.061163
0.107932 0.092651
C2
Cn
0.025253 1.252250
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 24. IGBT Transient Thermal Impedance
1
50% Duty Cycle
20%
0.1
10%
5%
2%
0.01
Single Pulse
0.001
1E−06
1E−05
RqJC = 0.50
Junction R1 R2
C1 C2
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
ON−PULSE WIDTH (s)
Figure 25. Diode Transient Thermal Impedance
Rn
Case Ri (°C/W) Ci (J/°C)
0.007703 0.000130
0.010613 0.000942
0.010097 0.003132
0.032329 0.003093
Cn
0.046791 0.006758
0.044179 0.022635
0.083870 0.119232
0.044938 0.703706
0.217376 0.460033
0.1
1
www.onsemi.com
7
Share Link: 