FGB20N60SFD_F085 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FGB20N60SFD_F085

600V, 20A Field Stop IGBT

Fairchild Semiconductor 

FGB20N60SFD_F085

600V, 20A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A

• High input impedance

• Fast switching

• Qualified to Automotive Requirements of AEC-Q101

• RoHS complaint

Applications

• Inverters, SMPS, PFC, UPS

• Automotive Chargers, Converters, High Voltage

Auxiliaries

C

October 2013

General Description

Using novel field-stop IGBT technology, Fairchild’s new series

of field-stop IGBTs offers the optimum performance for

automotive chargers, inverters, and other applications where

low conduction and switching losses are essential.

C

D2-PAK

GE

Absolute Maximum Ratings

Symbol

Description

VCES

VGES

IC

ICM (1)

IF

IFM(1)

PD

TJ

Tstg

TL

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

Collector Current

@ TC = 25oC

@ TC = 100oC

Pulsed Collector Current

Diode Forward Current

Diode Forward Current

@ TC = 25oC

@ TC = 25oC

@ TC = 100oC

Pulsed Diode Maximum Forward Current

Maximum Power Dissipation

Maximum Power Dissipation

@ TC = 25oC

@ TC = 100oC

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

RθJC(IGBT) ( 2) Thermal Resistance, Junction to Case

RθJC(Diode) Thermal Resistance, Junction to Case

Symbol

Parameter

RθJA

Thermal Resistance, Junction to Ambient (PCB Mount)(2)

©2013 Fairchild Semiconductor Corporation

1

FGB20N60SFD_F085 Rev. C1

G

E

Ratings

600

± 20

40

20

60

20

10

60

208

83

-55 to +150

-55 to +150

300

Ratings

0.6

2.6

Typ.

75

Units

V

V

A

A

A

A

A

A

W

W

oC

oC

oC

Units

oC/W

oC/W

Units

oC/W

www.fairchildsemi.com

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