STPS40M80C 데이터 시트보기 (PDF) - STMicroelectronics

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STPS40M80C

Power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STPS40M80C

Table 2.

Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless

otherwise specified)

Symbol

Parameter

Value Unit

VRRM Repetitive peak reverse voltage

80

V

IF(RMS) Forward rms current

30

A

IF(AV) Average forward current, δ = 0.5

Tc = 150 °C Per diode

20

A

Tc = 150 °C Per device

40

IFSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal

Tc = 25 °C

200

A

PARM(1) Repetitive peak avalanche power

Tj = 25 °C, tp = 1 µs

10000

W

VARM(2)

Maximum repetitive peak

avalanche voltage

tp < 1 µs, Tj < 150 °C, IAR < 30 A

100

V

VASM(2)

Maximum single pulse

peak avalanche voltage

tp < 1 µs, Tj < 150 °C, IAR < 30 A

100

V

Tstg Storage temperature range

Tj Maximum operating junction temperature(3)

-65 to +175 °C

175

°C

1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the

avalanche energy measurements and diode validation in the avalanche are provided in the application

notes AN1768 and AN2025.

2. See Figure 11

3.

dPtot

dTj

<1

Rth(j-a)

condition to avoid thermal runaway for a diode on its own heatsink

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c) Junction to case

Rth(c) Coupling

per diode

total

1.30

°C/W

0.75

0.20

°C/W

When the two diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

2/10

Doc ID 018718 Rev 1

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