MT48H16M16LFF-8 데이터 시트보기 (PDF) - Micron Technology
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MT48H16M16LFF-8 Datasheet PDF : 58 Pages
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ADVANCE
256Mb: x16
MOBILE SDRAM
WRITE – FULL-PAGE BURST
T0
CLK
T1
tCL
tCH
tCKS tCKH
CKE
tCMS tCMH
COMMAND
ACTIVE
NOP
DQM/
DQML, DQMH
A0-A9, A11, A12
tAS tAH
ROW
tAS tAH
A10
ROW
BA0, BA1
tAS tAH
BANK
DQ
tRCD
T2
tCK
WRITE
tCMS tCMH
COLUMN m1
BANK
tDS tDH
DIN m
T3
NOP
T4
NOP
T5
( ( Tn + 1
))
((
))
((
))
((
))
((
))
NOP ( (
NOP
))
((
))
((
))
Tn + 2
Tn + 3
BURST TERM
NOP
((
))
((
))
((
))
((
))
((
))
((
))
tDS tDH
DIN m + 1
tDS tDH
DIN m + 2
tDS tDH
((
))
DIN m + 3 ( (
))
tDS tDH
DIN m - 1
512 (x16) locations within same row
1,024 (x8) locations within same row
2,048 (x4) locations within same row
Full-page burst does
not self-terminate.
Can use BURST TERMINATE
command to stop.2, 3
Full page completed
DON’T CARE
NOTE: 1. x16: A9, A11 and A12 = “Don’t Care”
2. tWR must be satisfied prior to PRECHARGE command.
3. Page left open; no tRP.
TIMING PARAMETERS
SYMBOL*
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
tCK (1)
-8
MIN MAX
1
2.5
3
3
8
10
20
-10
MIN MAX
1
2.5
3
3
10
12
25
UNITS
ns
ns
ns
ns
ns
ns
ns
*CAS latency indicated in parentheses.
SYMBOL*
tCKH
tCKS
tCMH
tCMS
tDH
tDS
tRCD
-8
MIN MAX
1
2.5
1
2.5
1
2.5
20
-10
MIN MAX
1
2.5
1
2.5
1
2.5
20
UNITS
ns
ns
ns
ns
ns
ns
ns
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
55
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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