MT48H16M16LFF-8 데이터 시트보기 (PDF) - Micron Technology
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MT48H16M16LFF-8 Datasheet PDF : 58 Pages
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ADVANCE
256Mb: x16
MOBILE SDRAM
WRITE – DQM OPERATION 1
T0
T1
T2
T3
T4
T5
T6
CLK
tCK
tCL
tCH
tCKS tCKH
CKE
tCMS tCMH
COMMAND
ACTIVE
DQM/
DQML, DQMU
A0-A9, A11, A12
A10
BA0, BA1
tAS tAH
ROW
tAS tAH
ROW
tAS tAH
BANK
DQ
NOP
WRITE
NOP
tCMS tCMH
COLUMN m2
ENABLE AUTO PRECHARGE
DISABLE AUTO PRECHARGE
BANK
tDS tDH
DIN m
NOP
NOP
NOP
tDS tDH
DIN m + 2
tDS tDH
DIN m + 3
tRCD
T7
NOP
DON’T CARE
NOTE: 1. For this example, the burst length = 4.
2. x16: A9, A11 and A12 = “Don’t Care”
TIMING PARAMETERS
SYMBOL*
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
tCK (1)
-8
MIN MAX
1
2.5
3
3
8
10
20
-10
MIN MAX
1
2.5
3
3
10
12
25
UNITS
ns
ns
ns
ns
ns
ns
ns
*CAS latency indicated in parentheses.
SYMBOL*
tCKH
tCKS
tCMH
tCMS
tDH
tDS
tRCD
-8
MIN MAX
1
2.5
1
2.5
1
2.5
20
-10
MIN MAX
1
2.5
1
2.5
1
2.5
20
UNITS
ns
ns
ns
ns
ns
ns
ns
256Mb: x16 Mobile SDRAM
MobileRamY26L_A.p65 – Pub. 5/02
56
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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