SGB15N120 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
제조사
SGB15N120 Datasheet PDF : 12 Pages
| |||
SGP15N120 SGP15N120
SGW15N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1
(TO-263AB)
(TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGP15N120
SGB15N120
SGW15N120
VCE
IC
1200V 15A
Eoff
1.5mJ
Tj
150°C
Package
TO-220AB
TO-263AB(D2PAK)
TO-247AC
Ordering Code
Q67040-S4274
Q67040-S4275
Q67040-S4276
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
Short circuit withstand time1)
VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
-
Value
Unit
1200
V
A
30
15
52
52
±20
V
85
mJ
10
µs
198
W
-55...+150
°C
260
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Jul-02
Share Link: 