10N80K5(2014) 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

10N80K5
(Rev.:2014)

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package

STMicroelectronics 

STF10N80K5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VGS

ID(1)

ID(1)

IDM (2)

PTOT

IAR

EAS

VISO

dv/dt (3)

dv/dt(4)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by Tjmax)

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t=1 s; TC=25 °C)

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tj

Operating junction temperature

Tstg

Storage temperature

1. Limited by maximum junction temperature.

2. Pulse width limited by safe operating area.

3. ISD ≤ 9 A, di/dt ≤ 100 A/µs, VDS(Peak) ≤ V(BR)DSS

4. VDS ≤ 640 V

± 30

9

6

36

30

3

130

2500

4.5

50

-55 to 150

Units

V

A

A

A

W

A

mJ

V

V/ns

V/ns

°C

Symbol

Rthj-case

Rthj-amb

Table 3. Thermal data

Parameter

Thermal resistance junction-case max

Thermal resistance junction-ambient max

Value

4.2

62.5

Units

°C/W

DocID026564 Rev 4

3/14

14

Share Link: