MT28F002B3 데이터 시트보기 (PDF) - Micron Technology
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MT28F002B3 Datasheet PDF : 31 Pages
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SMART 3 BOOT BLOCK FLASH MEMORY
WRITE/ERASE CYCLE ENDURANCE
The MT28F002B3 and MT28F200B3 are designed
and fabricated to meet advanced firmware storage re-
quirements. To ensure this level of reliability, VPP must
be at 3.3V ±0.3V or 5V ±10% during write or erase
cycles. For SmartVoltage-compatible production pro-
gramming, 12V VPP is supported for a maximum of 100
cycles and may be connected for up to 100 cumulative
hours. Operation outside these limits may reduce the
number of write and erase cycles that can be performed
on the device.
POWER USAGE
The MT28F002B3 and MT28F200B3 offer several
power-saving features that may be utilized in the array
read mode to conserve power. Deep power-down mode
is enabled by bringing RP# LOW. Current draw (ICC) in
this mode is a maximum of 8µA at 3.3V VCC. With CE#
LOW, the device will enter idle current mode when it
is not being accessed. In this mode, the maximum ICC
current is 2mA at 3.3V VCC. When CE# is HIGH, the
device will enter standby mode. In this mode, maxi-
mum ICC current is 100µA at 3.3V VCC. If CE# is brought
HIGH during a WRITE or ERASE, the ISM will continue
to operate, and the device will consume the respective
active power until the WRITE or ERASE is
completed.
POWER-UP
The likelihood of unwanted WRITE or ERASE opera-
tions is minimized since two consecutive cycles are
required to execute either operation. However, to reset
the ISM and to provide additional protection while VCC
is ramping, one of the following conditions must be
met:
• RP# must be held LOW until VCC is at valid
functional level; or
• CE# or WE# may be held HIGH and
RP# must be toggled from VCC-GND-VCC.
After a power-up or RESET, the status register is reset,
and the device will enter the array read mode.
RP#
VCC
(3.3V)
,,,,,, Address
Note 1
tAA
VALID
,,
Data
NOTE:
, tRWH
VALID
UNDEFINED
, 1. VCC must be within the valid operating range before RP#
goes HIGH.
Figure 2
Power-Up/Reset Timing Diagram
2Mb Smart 3 Boot Block Flash Memory
F48.p65 – Rev. 1/00
14
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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