MT28F002B3 데이터 시트보기 (PDF) - Micron Technology

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MT28F002B3

2Mb SMART 3 BOOT BLOCK FLASH MEMORY

Micron Technology 

CAPACITANCE

(TA = 25°C; f = 1 MHz)

PARAMETER/CONDITION

Input Capacitance

Output Capacitance

2Mb

SMART 3 BOOT BLOCK FLASH MEMORY

SYMBOL

CI

CO

MAX

8

12

UNITS NOTES

pF

pF

READ AND STANDBY CURRENT DRAIN

Commercial Temperature (0°C ≤ TA ≤ +70°C) and Extended Temperature (-40°C ≤ TA ≤ +85°C)

PARAMETER/CONDITION

READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS

(CE# ≤ 0.2V; OE# ≥ VCC - 0.2V; f = 5 MHz; Other inputs ≤ 0.2V

or ≥ VCC - 0.2V; RP# ≥ VCC - 0.2V)

READ CURRENT: BYTE-WIDE, CMOS INPUT LEVELS

(CE# ≤ 0.2V; OE# ≥ VCC - 0.2V; f = 5 MHz; Other inputs ≤ 0.2V

or ≥ VCC - 0.2V; RP# = VCC - 0.2V)

STANDBY CURRENT: TTL INPUT LEVELS

VCC power supply standby current

(CE# = RP# = VIH; Other inputs = VIL or VIH)

STANDBY CURRENT: CMOS INPUT LEVELS

VCC power supply standby current

(CE# = RP# = VCC - 0.2V)

DEEP POWER-DOWN CURRENT: VCC SUPPLY (RP# = VSS ±0.2V)

STANDBY OR READ CURRENT: VPP SUPPLY (VPP ≤ 5.5V)

DEEP POWER-DOWN CURRENT: VPP SUPPLY (RP# = VSS ±0.2V)

SYMBOL MAX UNITS NOTES

ICC1

15 mA 1, 2

ICC2

15 mA 1, 2

ICC3

2

mA

ICC4

100 µA

ICC6

8

µA

IPP1

±15 µA

IPP2

5

µA

NOTE: 1. ICC is dependent on cycle rates.

2. ICC is dependent on output loading. Specified values are obtained with the outputs open.

2Mb Smart 3 Boot Block Flash Memory

F48.p65 – Rev. 1/00

19

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2000, Micron Technology, Inc.

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