MT46H16M16 데이터 시트보기 (PDF) - Micron Technology

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MT46H16M16

Mobile DDR SDRAM

Micron Technology 

Figure 7: CAS Latency

CK#

CK

Command

DQS

DQ

256Mb: x16, x32 Mobile DDR SDRAM

Register Definition

T0

T1 T1n T2 T2n T3 T3n

READ

NOP

NOP

NOP

1n clock

tAC

CL = 2

DOUT

n

DOUT

n+1

DOUT

n+2

DOUT

n+3

CK#

CK

Command

T0

READ

DQS

DQ

T1

T2 T2n T3 T3n

NOP

NOP

NOP

2n clock

tAC

CL = 3

DOUT

n

DOUT

n+1

Transitioning data

Don’t Care

Notes: 1. BL = 4 in the cases shown.

2. Shown with nominal tAC and nominal tDQSQ.

PDF: 09005aef82091978 / Source: 09005aef8209195b

MT46H16M16LF__2.fm - Rev. H 6/08 EN

18

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2005 Micron Technology, Inc. All rights reserved.

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